Dynamic snap-back induced programming failure in stacked gate Flash EEPROM cells and efficient remedying technique

IEEE Transactions on Electron Devices

Volumn 46, Issue 12, 1999, Pages 2340-2343

  Quan, Wuyun ^a,b   Cho, Myung Kwan ^a   Kim, Dae M ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; LEAKAGE CURRENTS; MICROPROGRAMMING;

DYNAMIC SNAP PROGRAMMING FAILURES; ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); FLASH MEMORY;

PROM;

EID: 0033315458     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.808077     Document Type: Article

References (14)

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