Ultrahigh-speed IC technologies using InP-based HEMTs for future optical communication systems

IEICE Transactions on Electronics

Volumn E82-C, Issue 3, 1999, Pages 409-417

  Umeda, Yohtaro ^a   Enoki, Takatomo ^a   Otsuji, Taiichi ^a   Suemitsu, Tetsuya ^a   Yokoyama, Haruki ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Delay; HEMT; IC; Inp; Optical communication

Indexed keywords

ELECTRIC INSULATORS; ETCHING; FREQUENCY DIVIDING CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MULTIPLEXING EQUIPMENT; OPTICAL COMMUNICATION; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING INDIUM PHOSPHIDE; TECHNOLOGY;

BENZOCYCLOBUTENE; INTERCONNECTION DELAY; OPTICAL COMMUNICATION SYSTEMS; ULTRAHIGH SPEED IC TECHNOLOGY;

DIGITAL INTEGRATED CIRCUITS;

EID: 0033313424     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. T. Enoki, H. Yokoyama, Y. Umeda, and T. Otsuji, "Ultrahigh-specd integrated circuits using InP-based highelectron-mobility transistors (HEMTs)," Jpn. J. Appl. Phys., vol.37, part 1, no.3B, pp.1359-1364, March 1997.
2. L.D. Nguyen, A.S. Brown, M.A. Thompson, and L.M. Jelloian, "50 nm self-aligned gate pseudomorphic A1InAs/GalnAs high electron mobility transistors," IEEE Trans. Electron Devices, vol.39, pp.2007-2014, 1992.
3. P.M. Smith, S.M.J. Liu, M.Y. Kao, P. Ho, S.O. Wang, K.H.G. Duh, S.T. Fu, and P.C. Chao, "W-band high efficiency InP-based power HEMT with GOO GHz fmax," IEEE Microwave and Guided Wave Lett., vol.5, no.7, pp.230-232, July 1995.
4. T. Enoki, "Ultrahigh-speed integerated circuits using InPbased high-electron mobility transistors (HEMTs)," Oyo Buturi, vol.66, no.2, pp.127-131, 1997.
5. T. Enoki, T. Kobayashi, and Y. Ishii, "Device technologies for InP-based HEMTs and their application to ICs," 1994 IEEE GaAs 1C Symp. Tech. Dig., pp.337-340, Oct. 1994.
6. T. Enoki, H. Ito, K. Ikuta, and Y. Ishii, "0.1-/im InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD," Proc. 7th Int. Conf. InP and Related materials, pp.81-84, 1995.
7. T. Enoki, Y. Umeda, K. Osafune, H. Ito, and Y. Ishii, "Ultrahigh-spced InAlAs/InGaAs HEMTs ICs using pnlevel-shift diodes," 1995 IEEE Int. Electron Device Meeting Tech. Dig., Washington, pp.193-196, 1995.
8. Y. Umeda, K. Osafune, T. Enoki, H. Ito, and Y. Ishii, "SCFL static frequency divider using InAlAs/InGaAs/InP HEMTs," Proc. 25th European Microw. Conf., Bologna, pp.222-228, Sept. 1995.
9. Y. Umeda, K. Osafune, T. Enoki, H. Yokoyama, and Y. Ishii, "49-GHz operation of an static frequency divider using high-speed interconnections and InP-bascd HEMTs," 1998 Asia Pacific Microwave Conf. Proc., pp.1339-1342, Dec. 1998.
10. T. Otsuji, K. Murata, T. Enoki, and Y. Umeda, "An 80Gbit/s multiplexer 1C using InAlAs/InGaAs/InP HEMTs," 1997 IEEE GaAs 1C Symp. Tech. Dig., pp.183-186, 1997.
11. T. Otsuji, Y. Yoneyama, Y. Imai, T. Enoki, and Y. Umeda, "64Gbit/s multiplexer 1C using InAlAs/InGaAs/InP HEMTs," Electron. Lett., vol.33, no.17, pp.1488-1489, Aug. 1997.
12. K. Murata, T. Otsuji, M. Ohhata, M. Togashi, E. Sano, and M. Suzuki, "A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19 Gb/s decision circuit using 0.2 /im GaAs MESFET," 1994 IEEE GaAs 1C Symp. Tech. Dig., pp. 193-196, 1994.
13. T. Otsuji, M. Yoneyama, K. Murata, Y. Imai, T. Enoki, and Y. Umeda, "2-46.5GHz quasi-static 2:1 frequency divider 1C using InAlAs/InGaAs/InP HEMTs," Electron. Lett., vol.33, no.16, pp.1376-1377, July 1997.
14. T. Otsuji, M. Yoneyama, K. Murata, and E. Sano, "A super-dynamic flip-flop circuit for broadband applications up to 24-Gbit/s utilizing production-level Q.2-/im GaAs MESFETs," 1996 IEEE GaAs 1C Symp. Tech. Dig., pp.145-148, 199G.
15. M. Yoneyama, T. Otsuji, Y. Imai, S. Yamaguchi, T. Enoki, Y. Umeda, and K. Hagimoto, "A 46-Gb/s super-dynamic decision circuit module using InAlAs/InGaAs HEMTs," Electron. Lett., vol.33, no.17, pp.1472-1473, 1997.
16. M. Yoneyama, A. Sano, K. Hagimoto, T. Otsuji, K. Murata, Y. Imai, S. Yamaguchi, T. Enoki, and E. Sano, "A 40-Gbit/ optical repeater circuits using InAlAs/InGaAs HEMT digital 1C chip set," 1997 IEEE MTT-S Int. Microw. Symp. Dig., pp.461-464, 1997.
17. S. Yamaguchi, Y. Imai, S. Kimura, and H. Tsunetsugu, "New module structure using flip-chip technology for highspeed optical communication IC's," 1996 IEEE MTT-S Int. Microw. Symp. Dig., pp.243-246, 1996.
18. S. Kimura, Y. Imai, Y. Umeda, and T. Enoki, "0-90 GHz InAlAs/InGaAs HEMT distributed baseband amplifier 1C," Electron. Lett., vol.31, no.17, pp.1430-1431, 1995.
19. Y. Imai, S. Kimura, T. Enoki, and Y. Umeda, "A DC-to100-GHz InP HEMT 1:2 distributer 1C using distributed amplification," IEEE Microw. Guided Wave Lett., vol.6, no.7, pp.256-258, 1995.
20. K. Hagimoto, T. Kataoka, M. Yoneyama, and I. Kobayasi, "Impact on InP-based ICs on future lightwave communication systems," Proc. 9th Int. Conf. InP and Related Materials, pp.233-236, 1997.
21. T. Suemitsu, T. Enoki, H. Yokoyama, and Y. Ishii, "Novel gate-recess process for the reduction of parasitic phenomena due to side-etching in InAlAs/InGaAs HEMTs," Extended Abstracts of 1997 Int. Conf. Solid State Devices and Materials, pp.426-427, 1997.
22. T. Suemitsu, T. Enoki, H. Yokoyama, and Y. Ishii, "Improved recessed-gate structure for sub-0.1-μm-gate InP-based high-electron mobility transistors," Jpn. J. Appl. Phys., vol.37, no.3B, pp.1365-1372, March 1998.
23. P. Blondy, A.R. Brown, D. Cros, and G.M. Rcbeiz, "Lowloss micromachined filters for millimeter-wave telecommunication systems," IEEE MTT-S Int. Microw. Symp. Dig., pp.1181-1184, Baltimore, June 1998.
24. Y. Imai, M. Nakamura, S. Kimura, Y. Umeda,' and T. Enoki, "40-Gb/s-cIass InP HEMT ICs for very-high-speed optical communications," Proc. 7th Int. Conf. InP and Related Materials, pp.89-92, 1995.
25. M. Nakamura, Y. Imai, S. Yamahata, and Y. Umeda, "Over 30-GHz Limiting Amplifier IC's with Small Phase Deviation