2-46.5GHz quasi-static 2:1 frequency divider IC using InAlAs/InGaAs/InP HEMTs

Electronics Letters

Volumn 33, Issue 16, 1997, Pages 1376-1377

  Otsuji, T ^a   Yoneyama, M ^a   Murata, K ^a   Imai, Y ^a   Enoki, T ^a   Umeda, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Dividing circuits; High electron mobility transistors; Integrated circuits

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; FREQUENCY RESPONSE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

GHZ FREQUENCY RANGE;

FREQUENCY DIVIDING CIRCUITS;

EID: 0031187587     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970939     Document Type: Article

References (6)

1. ENOKI, T., UMEDA, Y., OSAFUNE, K., ITO, H., and ISHII, Y.: 'Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes'. Tech. Dig. Int. Electron Device Meeting, 1995, pp. 193-196
2. JENSEN, J.F., HAFIZI, M., STANCHINA, W.E., METZGER, R.A., and RENSCH, D.B.: '39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology'. Tech. Dig. IEEE GaAs IC Symp., 1992, pp. 101-104
3. THIEDE, A., BERROTH, M., TASKER, P., SCHLECHTWEG, M., SEIBEL, J., RAYNOR, B., HÜLSMANN, A., KÖHLER, K., and BRONNER, W.: 'Digital dynamic frequency dividers for broadband application up to 60GHz'. Tech. Dig. IEEE GaAs IC Symp., 1993, pp. 91-94
4. ENOKI, T., ITO, H., IKUTA, K., and ISHII, Y.: '0.1μm InAs/InGaAs HEMT with an InP-recess-etch stopper grown by MOCVD'. Int. Conf. Indium Phosphide and Related Materials, Hokkaido, Japan, 1995, pp. 81-88
5. OTSUJI, T., YONEYAMA, M., IMAI, Y., ENOKI, T., and UMEDA, Y.: 'A 64-Gbit/s 2:1 multiplexer IC using InAlAs/InGaAs/InP HEMTs', submitted to Electron. Lett.
6. MURATA, K., OHHATA, M., TOGASHI, M., and SUZUKI, M.: '20Gbit/s GaAs MESFET multiplexer IC using a novel T-type flip-flop circuit', Electron. Lett., 1992, 28, (22), pp. 2090-2091