-
1
-
-
0028697489
-
A 40GHz D-type flip-flop using AlGaAs/GaAs HBTs
-
KURIYAMA, Y., SUGAYAMA, T., HONGO, S., AKAGI, J., TSUDA, K., IIZUKA, N., and OHBA, M.: 'A 40GHz D-type flip-flop using AlGaAs/GaAs HBTs'. Tech. Dig. GaAs IC Symp., 1994, pp. 189-192
-
(1994)
Tech. Dig. GaAs IC Symp.
, pp. 189-192
-
-
Kuriyama, Y.1
Sugayama, T.2
Hongo, S.3
Akagi, J.4
Tsuda, K.5
Iizuka, N.6
Ohba, M.7
-
2
-
-
3142623446
-
A 40Gbit/s super-dynamic decision IC using 0.15μm GaAs MESFET
-
WEID-3
-
MURATA, K., OTSUJI, T., YONEYAMA, M., and TOKUMITSU, M.: 'A 40Gbit/s super-dynamic decision IC using 0.15μm GaAs MESFET'. Tech. Dig. MTT-S IMS, 1997, WEID-3
-
(1997)
Tech. Dig. MTT-S IMS
-
-
Murata, K.1
Otsuji, T.2
Yoneyama, M.3
Tokumitsu, M.4
-
3
-
-
0029217064
-
0.1μm InAlAs/InGaAs HEMTs with an InP recess-etch stopper grown by MOCVD
-
Hokkaido, Japan, WB2.4
-
ENOKI, T., ITOH, H., IKUTA, K., and ISHII, Y.: '0.1μm InAlAs/InGaAs HEMTs with an InP recess-etch stopper grown by MOCVD'. Tech. Dig. Int. Conf. Indium Phosphide and Rel. Mater. Conf. Proc., 1995, Hokkaido, Japan, WB2.4
-
(1995)
Tech. Dig. Int. Conf. Indium Phosphide and Rel. Mater. Conf. Proc.
-
-
Enoki, T.1
Itoh, H.2
Ikuta, K.3
Ishii, Y.4
-
4
-
-
0029519984
-
Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn level-shift diodes
-
ENOKI, T., UMEDA, Y., OSAFUNE, K., ITOH, H., and ISHII, Y.: 'Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn level-shift diodes'. Tech. Dig. Int. Electron Device Meet., 1995, pp. 193-196
-
(1995)
Tech. Dig. Int. Electron Device Meet.
, pp. 193-196
-
-
Enoki, T.1
Umeda, Y.2
Osafune, K.3
Itoh, H.4
Ishii, Y.5
-
5
-
-
0025498160
-
A new interfacing method 'SCFL-interfacing' for ultra-high-speed logic ICs
-
TAKADA, T., OHTSUKA, H., and OHHATA, M.: 'A new interfacing method 'SCFL-interfacing' for ultra-high-speed logic ICs'. Tech. Dig. GaAs Symp., 1990, pp. 211-214
-
(1990)
Tech. Dig. GaAs Symp.
, pp. 211-214
-
-
Takada, T.1
Ohtsuka, H.2
Ohhata, M.3
-
6
-
-
0030405059
-
A superdynamic flip-flop circuit for broadband applications up to 24Gbit/s utilizing production-level 0.2-μm GaAs MESFET
-
E.6
-
OTSUJI, T., YONEYAMA, M., MURATA, K., and SANG, E.: 'A superdynamic flip-flop circuit for broadband applications up to 24Gbit/s utilizing production-level 0.2-μm GaAs MESFET'. Tech. Dig. GaAs IC Symp., 1996, E.6
-
(1996)
Tech. Dig. GaAs IC Symp.
-
-
Otsuji, T.1
Yoneyama, M.2
Murata, K.3
Sang, E.4
-
7
-
-
0027222326
-
Capactive feedback technique for wide-band amplifiers
-
VADIPOUR, M.: 'Capactive feedback technique for wide-band amplifiers', IEEE J. Solid-Slate Circuits, 1993, 28, (1), pp. 90-92
-
(1993)
IEEE J. Solid-Slate Circuits
, vol.28
, Issue.1
, pp. 90-92
-
-
Vadipour, M.1
-
8
-
-
0029700787
-
New module structure using flip-chip technology for high-speed optical communication ICs
-
YAMAGUCHI, S., IMAI, Y., KIMURA, S., and TSUNETSUGU, H.: 'New module structure using flip-chip technology for high-speed optical communication ICs'. Tech Dig. MTT-S IMS, 1996, pp. 243-246
-
(1996)
Tech Dig. MTT-S IMS
, pp. 243-246
-
-
Yamaguchi, S.1
Imai, Y.2
Kimura, S.3
Tsunetsugu, H.4
-
9
-
-
0030689164
-
40Gbit/s optical repeater circuit using InAlAs/InGaAs HEMT digital IC technology
-
WE1D-2
-
YONEYAMA, M., SANO, A., HAGIMOTO, K., OTSUJI, T., MURATA, K., IMAI, Y., YAMAGUCHI, S., ENOKI, T., and SANG, E.: '40Gbit/s optical repeater circuit using InAlAs/InGaAs HEMT digital IC technology'. Tech Dig. MTT-S IMS, 1997, WE1D-2
-
(1997)
Tech Dig. MTT-S IMS
-
-
Yoneyama, M.1
Sano, A.2
Hagimoto, K.3
Otsuji, T.4
Murata, K.5
Imai, Y.6
Yamaguchi, S.7
Enoki, T.8
Sang, E.9
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