Observation of coulomb blockade effects in AFM-machined tunnel junctions

Surface and Interface Analysis

Volumn 25, Issue 7-8, 1997, Pages 611-613

  Bruckl H ^a   Rank, R ^a   Vinzelberg, H ^a   Monch I ^a   Kretz, L ^a   Reiss, G ^a  

^a Institute for Solid Research   (Germany)

Author keywords

Coulomb blockade; Nanostructures; Scanning probe microscopy; Single electron effects

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; NANOSTRUCTURED MATERIALS; SILICON WAFERS; SURFACE TREATMENT;

COULOMB BLOCKADE EFFECTS; SCANNING PROBE MICROSCOPY;

TUNNEL JUNCTIONS;

EID: 0031152888     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1096-9918(199706)25:7/8<611::aid-sia286>3.0.co;2-2     Document Type: Article

References (10)

1. H. Grabert and M. H. Devoret (eds), Coulomb Blockade Phenomena in Nanostructures, NATO ASI Series B: Physics, Vol. 294. Plenum Press, New York (1992).
2. R. P. Andres, S. Datta, M. Dorogi, J. Gomez, J. I. Henderson, D. B. Janes, V. R. Kolagunta, C. P. Kubiak, W. Mahoney, R. F. Osifchin, R. Reifenberger, M. P. Samanta and W. Tian, J. Vac. Sci. Technol. A 14, 1178 (1996).
3. M. A. Kastner, Rev. Mod. Phys. 64, 849 (1992).
4. H. Grabert and M. H. Devoret, Phys. Bl. 50, 229 (1994).
5. Y. Nakamura, D. L. Klein and J. S. Tsai, Appl. Phys. Lett. 68, 275 (1996).
6. P. Radojkovic, M. Schwartzkopff, M. Enachescu, E. Stefanov, E. Hartmann and F. Koch, J. Vac. Sci. Technol. B 14, 1229 (1996).
7. Y. Kim and Ch. M. Lieber, Science 257, 375 (1992).
8. M. Wendel, S. Kühn, H. Lorenz, J. P. Kotthaus and M. Holland, Appl. Phys. Lett. 65, 1775 (1994).
9. G. Reiss, F. Schneider, J. Vancea and H. Hoffmann, Appl. Phys. Lett. 57, 867 (1990).
10. G. Reiss and H. Brückl, Surf. Sci. 267/270, 772 (1992).