On the bandstructure in GaInN/GaN heterostructures - Strain, band gap and piezoelectric effect

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Wetzel, Christian ^a   Nitta, Shugo ^a   Takeuchi, Tetsuya ^a   Yamaguchi, Shigeo ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARC LAMPS; BAND STRUCTURE; BRILLOUIN SCATTERING; CATHODE RAYS; CONDUCTIVE FILMS; ELECTRIC FIELDS; GALLIUM COMPOUNDS; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; STRAIN; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

ELECTROABSORPTION; ELECTRONIC BAND GAP; PEAK ENERGY; PHOTOREFLECTION;

HETEROJUNCTIONS;

EID: 4043169816     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001034     Document Type: Article

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