Anodic etching of n-type GaN films in NaOH electrolyte with Cl ions

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 734-737

  Ohkubo, Mitsugu ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

Anion effect; Anodic etching; Gallium hydroxide; GaN; NaCl; NaOH

Indexed keywords

CHLORINE; ELECTROLYTES; ETCHING; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SODIUM;

ANION EFFECTS; ANODIC ETCHING; GALLIUM HYDROXIDE; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032090697     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00275-9     Document Type: Article

References (7)

1. S. Nakamura, M. Senoh, T. Mukai, Jpn. J. Appl. Phys. 30 (1991) L1708.
2. H. Jeon, J. Ding, A.V. Nurmikko, W. Xie, D.C. Grillo, M. Kobayashi, R.L. Gunshor, G.C. Hua, N. Otsuka, Appl. Phys. Lett. 60 (1992) 2045.
3. M.E. Lin, Z.F. Fan, Z. Ma, L.H. Allen, H. Morkoc, Appl. Phys. Lett. 64 (1994) 887.
4. Y. Hirota, J. Appl. Phys. 75 (1994) 1798.
5. J.I. Pankove, J. Electrochem. Soc. 119 (1972) 1118.
6. N. Sato, Boshoku Gijutsu 39 (1990) 495.
7. M. Ohkubo, Jpn. J. Appl. Phys. 36 (1997) L955.