Thermal activation of shallow boron-ion implants

Journal of Electronic Materials

Volumn 28, Issue 12, 1999, Pages 1345-1352

  Fiory, A T ^a   Bourdelle, K K ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFUSION IN SOLIDS; ELECTRIC VARIABLES MEASUREMENT; ION IMPLANTATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL CYCLING; THERMOANALYSIS;

THERMAL ACTIVATION ANALYSIS;

SILICON WAFERS;

EID: 0033280438     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0120-0     Document Type: Article

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