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Volumn 216, Issue 1, 1999, Pages 619-623

Optical properties of as-grown, α-particle irradiated and N+2-ion implanted GaN

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Indexed keywords


EID: 0033229482     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<619::AID-PSSB619>3.0.CO;2-8     Document Type: Article
Times cited : (5)

References (17)
  • 2
    • 0040895683 scopus 로고
    • Eds. B. GIL and R. AULOMBARD, World Scientific, Singapore
    • B. BEAUMONT and P. GIBART, in: Semiconductor Heteroepitaxy, Eds. B. GIL and R. AULOMBARD, World Scientific, Singapore 1995 (p. 258).
    • (1995) Semiconductor Heteroepitaxy , pp. 258
    • Beaumont, B.1    Gibart, P.2
  • 16
    • 5644231961 scopus 로고
    • J. NEUGEBAUER and C.G VAN DE WALLE, Phys. Rev. B 50, 8067 (1994). C.G VAN DE WALLE, C. STAMPFL, and J. NEUGEBAUER, J. Cryst. Growth 189/190, 505 (1998) and references therein.
    • (1994) Phys. Rev. B , vol.50 , pp. 8067
    • Neugebauer, J.1    Van De Walle, C.G.2
  • 17
    • 0032094135 scopus 로고    scopus 로고
    • and references therein
    • J. NEUGEBAUER and C.G VAN DE WALLE, Phys. Rev. B 50, 8067 (1994). C.G VAN DE WALLE, C. STAMPFL, and J. NEUGEBAUER, J. Cryst. Growth 189/190, 505 (1998) and references therein.
    • (1998) J. Cryst. Growth , vol.189-190 , pp. 505
    • Van De Walle, C.G.1    Stampfl, C.2    Neugebauer, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.