Band-structure effects in the hot-carrier emission spectrum of GaAs FET devices

Semiconductor Science and Technology

Volumn 9, Issue 5 S, 1994, Pages 659-661

  Ostermeir, R ^a   Koch, F ^a   Brugger, H ^b   Narozny, P ^b   Dambkes, H ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; HIGH ELECTRON MOBILITY TRANSISTORS; HOT CARRIERS; LUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SOLID STATE PHYSICS;

EMISSION SPECTRUM; HOT CARRIER DISTRIBUTION; HOT ELECTRON LUMINESCENCE;

FIELD EFFECT TRANSISTORS;

EID: 0028424959     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/9/5S/069     Document Type: Article

References (8)

1. A study of photon emission from n-channel MOSFET's