Electromagnetic radiation from hot carriers in FET-devices

Solid State Electronics

Volumn 32, Issue 12, 1989, Pages 1065-1069

  Herzog, M ^a   Schels, M ^a   Koch, F ^a   Moglestue, C ^b   Rosenzweig, J ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

electron energy distribution; FET devices; hot electron temperature; hot electrons; light emission; Monte Carlo simulations

Indexed keywords

ELECTRONS; LIGHT - EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

BAND-TO-BAND TRANSITIONS; BREMSSTRAHLUNG-CONTINUUM; HOT CARRIERS; HOT ELECTRONS; MES DEVICES; MESFET;

TRANSISTORS, FIELD EFFECT;

EID: 0024914518     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90191-3     Document Type: Article

References (6)

1. Hot-electron-induced photon and photocarrier generation in Silicon MOSFET's
2. Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET's
3. A study of photon emission from n-channel MOSFET's