Impact Ionization and Light Emission in InAlAs/InGaAs Heterostructure Field-Effect Transistors

IEEE Transactions on Electron Devices

Volumn 42, Issue 4, 1995, Pages 752-759

  Berthold, Gunther ^a   Zanoni, Enrico ^a   Canali, Claudio ^b   Pavesi, Maura ^c   Pecchini, Mauro ^c   Manfredi, Manfredo ^c   Bahl, Sandeep R ^d   del Alamo, Jesús A ^d  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c Istituto di Neurologic   (Italy)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; IONIZATION; LIGHT; LIGHT EMISSION; PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS;

CHANNEL ELECTRONS; CONDUCTION TO CONDUCTION BAND TRANSITIONS; CONDUCTION TO VALENCE BAND TRANSITIONS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; IMPACT IONIZATION; LIGHT INTENSITY; REAL SPACE TRANSFER;

FIELD EFFECT TRANSISTORS;

EID: 0029291996     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.372081     Document Type: Article

References (18)

1. T. P. Pearsall, Ed., GaInAsP Alloy Semiconductors. New York: Wiley, 1982.
2. R. People, K. W. Wecht, K. Alavi, and A. Y. Cho, “Measurement of the conduction-band discontinuity of molecular beam epitaxial grown Ino, 52 Al o.48As/lnO. 53 Ga0.47As, .IV-n heterojunction by C-V profiling,” Appl. Phys. Lett., vol. 43, no. 1, pp. 118–120, 1983.
3. L. D. Nguyen, L. E. Larson, and U. K. Mishra, “Ultra high-speed modulation-doped field-effect-transistors: A tutorial review,” Proc. IEEE, vol. 80, no. 4, pp. 494–518, 1992.
4. U. K. Mishra, A. S. Brown, S. E. Rosenbaum, C. E. Hooper, M. W. Pierce, M. J. Delaney, S. Vaughn, and K. White, “Microwave performance of AlInAs-GaInAs HEMT's with 0.2- and 0.1-µm gate length,” IEEE Electron Device Lett., vol. 9, no. 12, pp. 647–649, 1988.
5. S. R. Bahl, B. R. Bennett, and J. A. del Alamo, “A high-voltage, double-strained In0. 41 A1 o. 59 As/n+ -Ino. 65 Gao.35As HFET,” in Proc. 4th Int. Conf, InP and Related Materials, pp. 222–225, Apr. 1992.
6. J. Bude and K. Hess, “Threshold of impact ionization in semiconductors,” J. Appl. Phys., vol. 72, no. 8, pp. 3554–3560, 1992.
7. E. Zanoni, A. Paccagnella, P. Pisoni, P. Telaroli, C. Tedesco, and C. Canali, “Impact ionization, recombination and visible light emission in AIGaAs/GaAs high electron mobility transistors,” J. Appl. Phys., vol. 70, no. 1, pp. 529–531, 1991.
8. A. Neviani, C. Tedesco, E. Zanoni, C. Canali, M. Manfredi and A. Cetronio, “Impact ionization and light emission in GaAs metal semiconductor field effect transistors,” J. Appl. Phys., vol. 74, no. 6, pp. 4213-220, 1993.
9. Y. C. Chen and P. K. Bhattacharya, “Impact ionization coefficients for electrons and holes in strained In0.2Ga0.8As and In0,1.5Gao,63Al0,22As channels embedded in Al0,3Ga0.7As,” J. Appl. Phys., vol. 73, no. 1, pp. 465-467, 1993.
10. K. Hui, C. Hu, P. George, and P. K. Ko, “Impact ionization in GaAs MESFET's,” IEEE Electron Device Lett., vol. 11, pp. 113–115, 1990.
11. G. Zandler, A. di Carlo, P. Vogl, and P. Lugli, “Monte-Carlo simulation of minority carrier transport and light emission phenomena in GaAs devices,” Semicond. Sci. Technol., vol. 9, no. 59, pp. 666-670, 1994.
12. S. R. Bahl, W. J. Azzam, and J. A. del Alamo, “Strained-insulator In x Al1-xAs/n+ -In0,53Ga0,47 As heterostructure field-effect transistors,” IEEE Trans. Electron Devices, vol. 38, no. 9, pp. 1986–1992, 1991.
13. F. Capasso, Semiconductors and Semimetals, W. T. Tsang, Ed. New York: Academic, vol. 22, 1985.
14. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
15. M. Mastrapasqua, S. Luryi, F. Capasso, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, “Light-emitting transistors based on real-space transfer: Electrical and optical properties,” IEEE Trans. Electron Devices, vol. 40, no. 2, pp. 250–258, 1993.
16. E. Zanoni, M. Manfredi, S. Bigliardi, A. Paccagnella, P. Pisoni, C. Tedesco, and C. Canali, “Impact ionization and light emission in AlGaAs/GaAs HEMT's,” IEEE Trans. Electron Devices, vol. 39, no. 8, pp. 1849–1857, 1992.
17. F. Buchali, C. Heedt, W. Prost, I. Gyuro, H. Meschede, and F. J. Tegude, “Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET,” in Proc. 22nd European Solid State Device Res. Conf., Leuven, 1992, published in Microelectronic Eng., vol. 19, pp. 401–404, 1992.
18. C. Canali, C. Tedesco, E. Zanoni, M. Manfredi, and A. Paccagnella, “Negative differential resistance and instabilities in 2-D semiconductors,” Proc. 1992 NATO ARWN. Balkan, B. K. Ridley and A. J. Vickers, Eds. New York: Plenum, pp. 215–249, 1993.