Mg-induced kinetical changes in the growth of cubic and hexagonal GaN by molecular beam epitaxy

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 385-389

  Mula, G ^a,b   Daudin, B ^a   Peyla, Ph ^c  

^a CEA GRENOBLE   (France)

^b Cittadella Universitaria   (Italy)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221581     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<385::AID-PSSA385>3.0.CO;2-6     Document Type: Article

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