MBE-growth of strain engineered GaN thin films utilizing a surfactant

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 75-80

  Klockenbrink, R ^a   Kim, Y ^a   Leung, M S H ^a   Kisielowski, C ^a   Kruger, J ^a   Sudhir, G S ^a   Rubin, M ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SURFACE ACTIVE AGENTS; THIN FILMS;

THREE DIMENSIONAL GROWTH MODEL;

SEMICONDUCTOR GROWTH;

EID: 0030721349     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-75     Document Type: Conference Paper

References (10)