SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 7-11

Incorporation of Mg in GaN grown by molecular beam epitaxy

(7) Orton, J W a Foxon, C T a Cheng, T S a Hooper, S E a,c Novikov, S V b Ber, B Ya b Kudriavtsev, Yu A b

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b IOFFE INSTITUTE (Russian Federation)

c SHARP LABORATORIES OF EUROPE LTD (United Kingdom)

Author keywords

Gan; Impurity doping; Kinetics; MBE

Indexed keywords

CHEMISORPTION; CRYSTAL IMPURITIES; MAGNESIUM; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; STOICHIOMETRY; SURFACE STRUCTURE; THERMAL EFFECTS;

GALLIUM NITRIDE; PLASMA ENHANCED MOLECULAR BEAM EPITAXY (PE-MBE);

SEMICONDUCTOR GROWTH;

EID: 0033079881 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00919-1 Document Type: Article

Times cited : (18)

References (21)

1
- 0029377278
- S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Appl. Phys. Lett. 67 (1995) 1868.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1868
- Nakamura, S.¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴

2
- 0029389357
- S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34 (1995) L1332.
- (1995) Jpn. J. Appl. Phys. , vol.34
- Nakamura, S.¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴ Yamada, T.⁵ Mukai, T.⁶

3
- 0002129719
- Tokushima, Japan
- J. Edmond, G. Bulman, H.S. Kong, M. Leonard, K. Doverspike, W. Weeks, J. Niccum, S. Sheppard, G. Negley, D. Slater, J.D. Brown, J.T. Swindell, T. Overocker, J.F. Schetzina, Y.K. Song, M. Kuball, A. Nurmiko, Proc. 2nd Int. Conf. on Nitride Semiconductors, Tokushima, Japan, 1997, p. 448
- (1997) Proc. 2nd Int. Conf. on Nitride Semiconductors , pp. 448
- Edmond, J.¹ Bulman, G.² Kong, H.S.³ Leonard, M.⁴ Doverspike, K.⁵ Weeks, W.⁶ Niccum, J.⁷ Sheppard, S.⁸ Negley, G.⁹ Slater, D.¹⁰ Brown, J.D.¹¹ Swindell, J.T.¹² Overocker, T.¹³ Schetzina, J.F.¹⁴ Song, Y.K.¹⁵ Kuball, M.¹⁶ Nurmiko, A.¹⁷

4
- 18744423003
- S.D. Lester, M.J. Ludowise, K.P. Killeen, B.H. Perez, J.N. Miller, S.J. Rosner, J. Crystal Growth 189/190 (1998) 786.
- (1998) J. Crystal Growth , vol.189-190 , pp. 786
- Lester, S.D.¹ Ludowise, M.J.² Killeen, K.P.³ Perez, B.H.⁴ Miller, J.N.⁵ Rosner, S.J.⁶

5
- 0032092588
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho, J. Crystal Growth 189/190 (1998) 820.
- (1998) J. Crystal Growth , vol.189-190 , pp. 820
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸ Kozaki, T.⁹ Umemoto, H.¹⁰ Sano, M.¹¹ Chocho, K.¹²

6
- 0343389110
- R.J. Molnar, T.D. Moustakas, Bull. Am. Phys. Soc. 38 (1993) 445.
- (1993) Bull. Am. Phys. Soc. , vol.38 , pp. 445
- Molnar, R.J.¹ Moustakas, T.D.²

7
- 21544437251
- T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, M. Koike, Appl. Phys. Lett. 65 (1994) 593.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 593
- Tanaka, T.¹ Watanabe, A.² Amano, H.³ Kobayashi, Y.⁴ Akasaki, I.⁵ Yamazaki, S.⁶ Koike, M.⁷

8
- 0001430225
- W. Kim, A. Salvador, A.E. Botchkarev, O. Aktas, S.N. Mohammad, H. Morkoc, Appl. Phys. Lett. 69 (1996) 559.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 559
- Kim, W.¹ Salvador, A.² Botchkarev, A.E.³ Aktas, O.⁴ Mohammad, S.N.⁵ Morkoc, H.⁶

9
- 0001022760
- W. Gotz, N.M. Johnson, J. Walker, D.P. Bour, R.A. Street, Appl. Phys. Lett. 68 (1996) 667.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 667
- Gotz, W.¹ Johnson, N.M.² Walker, J.³ Bour, D.P.⁴ Street, R.A.⁵

10
- 0030110699
- H. Nakayama, P. Hacke, M.R.H. Khan, T. Detchprohm, K. Hiramatsu, N. Sawaki, Jpn. J. Appl. Phys. 35 (1996) L282.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Nakayama, H.¹ Hacke, P.² Khan, M.R.H.³ Detchprohm, T.⁴ Hiramatsu, K.⁵ Sawaki, N.⁶

11
- 0030645932
- D.P. Bour, H.F. Chung, W. Gotz, L. Romano, B.S. Krustor, D. Hofstetter, S. Rudaz, C.P. Kuo, F.A. Ponce, N.M. Johnson, M.G. Craford, R.D. Bringans, Mater. Res. Soc. Symp. Proc. 449 (1997) 507.
- (1997) Mater. Res. Soc. Symp. Proc. , vol.449 , pp. 507
- Bour, D.P.¹ Chung, H.F.² Gotz, W.³ Romano, L.⁴ Krustor, B.S.⁵ Hofstetter, D.⁶ Rudaz, S.⁷ Kuo, C.P.⁸ Ponce, F.A.⁹ Johnson, N.M.¹⁰ Craford, M.G.¹¹ Bringans, R.D.¹²

12
- 0001287487
- S. Guha, N.A. Bojarczuk, F. Cardone, Appl. Phys. Lett. 71 (1997) 1685.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1685
- Guha, S.¹ Bojarczuk, N.A.² Cardone, F.³

13
- 0032093255
- M. Suzuki, J. Nishio, N. Onomura, C. Hongo, J. Crystal Growth 189/190 (1998) 511.
- (1998) J. Crystal Growth , vol.189-190 , pp. 511
- Suzuki, M.¹ Nishio, J.² Onomura, N.³ Hongo, C.⁴

14
- 0029779805
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸

15
- 0032092947
- M.P. Mack, A.C. Abare, M. Hansen, P. Kozodoy, S. Keller, U. Mishra, L.A. Coldren, S.P. DenBaars, J. Crystal Growth 189/190 (1998) 837.
- (1998) J. Crystal Growth , vol.189-190 , pp. 837
- Mack, M.P.¹ Abare, A.C.² Hansen, M.³ Kozodoy, P.⁴ Keller, S.⁵ Mishra, U.⁶ Coldren, L.A.⁷ DenBaars, S.P.⁸

16
- 9344259966
- Tokushima, Japan
- J. Neugebauer, T. Zywietz, M. Scheffler, J.E. Northrup, Proc. 2nd Int. Conf. on Nitride Semiconductors, Tokushima, Japan, 1997, p. 216.
- (1997) Proc. 2nd Int. Conf. on Nitride Semiconductors , pp. 216
- Neugebauer, J.¹ Zywietz, T.² Scheffler, M.³ Northrup, J.E.⁴

17
- 30244485098
- R. Arthur, J. Phys. Chem. Solids 28 (1967) 2257.
- (1967) J. Phys. Chem. Solids , vol.28 , pp. 2257
- Arthur, R.¹

18
- 0029632832
- C. Chatillon, D. Chatain, J. Crystal Growth 151 (1995) 91.
- (1995) J. Crystal Growth , vol.151 , pp. 91
- Chatillon, C.¹ Chatain, D.²

19
- 0001396425
- M. Ilegems, M.B. Panish, J.R. Arthur, J. Chem. Thermodynamics 6 (1974) 157.
- (1974) J. Chem. Thermodynamics , vol.6 , pp. 157
- Ilegems, M.¹ Panish, M.B.² Arthur, J.R.³

20
- 0000436987
- R.E. Honig, D.A. Kramer, RCA Rev. 30 (1969) 285.
- (1969) RCA Rev. , vol.30 , pp. 285
- Honig, R.E.¹ Kramer, D.A.²

21
- 0000217798
- S. Guha, N.A. Bojarczuk, D.W. Kisker, Appl. Phys. Lett. 69 (1996) 2879.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2879
- Guha, S.¹ Bojarczuk, N.A.² Kisker, D.W.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.