Physics and characterization of transient effects in SOI transistors

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 319-326

  Lacaita, A L ^a   Perron, L M ^b  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; LEAKAGE CURRENTS; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THRESHOLD VOLTAGE;

PARTIALLY DEPLETED-SILICON ON INSULATOR (PD-SOI) DEVICES; SOFTWARE PACKAGE SPICE;

MOSFET DEVICES;

EID: 0033190247     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00397-4     Document Type: Article

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