BESS: A source structure that fully suppresses the floating body effects in SOI CMOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 5, 1998, Pages 1077-1083

  Horiuchi, Masatada ^a   Tamura, Masao ^b  

^a HITACHI LTD   (Japan)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

Breakdown voltage; Floating body effect; Recombination center; Si ion implantation; SOICMOSFET; Solid phaseregrowth

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; EQUIVALENT CIRCUITS; ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

BIPOLAR EMBEDDED SOURCE STRUCTURE (BESS); FLOATING BODY EFFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032073248     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.669536     Document Type: Article

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