Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1395-1398

  Miyamoto, Y ^a   Tobita, H ^a   Oshima, K ^a   Furuya, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THICKNESS MEASUREMENT;

ALUMINUM ARSENIDE; BARRIER THICKNESS; GALLIUM INDIUM ARSENIDE; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; RESONANT TUNNELING DIODES;

TUNNEL DIODES;

EID: 0033175434     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00079-9     Document Type: Article

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