High peak-to-valley current ratio GaInAs/GaInP resonant tunneling diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 8, 1997, Pages 5079-5080

  Oobo, Takashi ^a   Takemura, Riichiro ^a   Suhara, Michihiko ^a   Miyamoto, Yasuyuki ^a   Furuya, Kazuhito ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaInAs GaInP; OMVPE; Resonant tunneling diodes; Strained layer

Indexed keywords

RESONANT TUNNELING DIODES (RTD);

BAND STRUCTURE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTOR DIODES;

EID: 0031212311     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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