Investigation of Very Fast and High-Current Transients in Digital Bipolar IC's Using Both a New Compact Model and a Device Simulator

IEEE Journal of Solid-State Circuits

Volumn 30, Issue 5, 1995, Pages 551-562

  Rein, Hans Martin ^b  

^a NORTEL NETWORKS   (Canada)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIGITAL CIRCUITS; DIGITAL INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; SEMICONDUCTOR DEVICE MODELS; SIMULATORS; TRANSIENTS; TRANSISTORS;

DEVICE SIMULATOR; DIGITAL BIPOLAR INTEGRATED CIRCUIT; NON QUASI STATIC EFFECTS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0029306949     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.384168     Document Type: Article

References (35)

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