메뉴 건너뛰기




Volumn 43, Issue 5, 1996, Pages 836-839

Power bipolar transistors with a fast recovery integrated diode

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHARGE CARRIERS; EQUIVALENT CIRCUITS; ION IMPLANTATION; PLATINUM; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; THERMAL DIFFUSION IN SOLIDS;

EID: 0030151921     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.491262     Document Type: Article
Times cited : (12)

References (13)
  • 9
    • 33747598135 scopus 로고
    • Integrated bipolar power device and a fast diode, U.S. Patent 5,343,068, Aug. 30
    • F. Frisina and G. Ferla "Integrated bipolar power device and a fast diode," U.S. Patent 5,343,068, Aug. 30, 1990.
    • (1990)
    • Frisina, F.1    Ferla, G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.