Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC

Materials Science Forum

Volumn 264-268, Issue pt 2, 1998, Pages 849-852

  Campi, J ^a   Shi, Y ^a   Luo, Y ^a   Yan, F ^a   Lee, Y K ^a   Zhao, J H ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; METALLIZING; SILICA; SILICON CARBIDE; THERMAL EFFECTS;

POST-METALLIZATION ANNEALING (PMA);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031648650     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.264-268.849     Document Type: Article

References (6)