Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC

Electronics Letters

Volumn 34, Issue 7, 1998, Pages 698-700

  Shi, Yan ^a   Luo, Yanbin ^a   Campi, J ^a   Yan, Feng ^a   Lee, Yong K ^a   Zhao, Jian H ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; METALLIZING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA;

EFFECTIVE FIXED CHARGE DENSITY; POST-METALLIZATION ANNEALING (PMA);

SILICON CARBIDE;

EID: 0032473626     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980444     Document Type: Article

References (4)

1. 2/SiC metal-oxide semiconductor interface'. J. Electron. Mater., 1995, 24, pp. 303-309
2. 2/SiC defects', J. Electron. Mater., 1996, 25, pp. 909-915
3. STEIN VON KAMIENSKI, E.G., PORTHEINE, F., STEIN, G.Z.J.A., and KURZ, H.: 'Charge trapping in dry and wet oxides on n-type 6H-SiC studied by Fowler-Nordheim charge injection'. J. Appl. Phys., 1996, 79, pp. 2529-2534
4. 2-Si structures', J. Electrochem. Soc., 1969, 116, pp. 997-1005