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Volumn , Issue , 1998, Pages 218-219
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Highly robust ultra-thin gate dielectric for giga scale technology
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN OF SOLIDS;
LEAKAGE CURRENTS;
SILICON NITRIDE;
ULTRATHIN FILMS;
JET VAPOR DEPOSITION (JVD);
STRESS-INDUCED LEAKAGE CURRENTS;
DIELECTRIC FILMS;
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EID: 0031636456
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (10)
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References (6)
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