Molecular precursors to group 13 nitrides, 14. Synthesis and structures of (N3)2Ga[(CH2)3NMe2], (N3)Ga[(CH2)3NMe2]2 and (N3)3Ga(NR3) (R = CH3, C2H5)

European Journal of Inorganic Chemistry

Volumn , Issue 12, 1999, Pages 2127-2134

  Devi, Anjana ^a   Sussek, Harald ^a   Pritzkow, Hans ^b   Winter, Manuela ^a   Fischer, Roland A ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF HEIDELBERG   (Germany)

Author keywords

Azides; Chemical vapour deposition; Gallium; Gallium nitride; Single source precursors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DIMERS; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; SAPPHIRE; SINGLE CRYSTALS; THIN FILMS; VOLATILE ORGANIC COMPOUNDS;

AZIDE; CHEMICAL VAPOUR DEPOSITION; MOLECULAR PRECURSOR; MONOMERICS; ORGANOGALLIUM; PROPERTY; SINGLE-SOURCE PRECURSOR; SLOW COOLING; TRIALKYLAMINE; X-RAY SINGLE CRYSTAL STRUCTURE ANALYSIS;

GALLIUM NITRIDE;

AZIDE; GALLIUM;

ARTICLE; CRYSTAL STRUCTURE; DERIVATIZATION; DRUG SYNTHESIS; LIGHT EMITTING DIODE; MACROMOLECULE; SOLID STATE; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE; VOLATILIZATION; X RAY CRYSTALLOGRAPHY;

EID: 0032697925     PISSN: 14341948     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1099-0682(199912)1999:12<2127::aid-ejic2127>3.0.co;2-n     Document Type: Article

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