Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides

Advanced Materials for Optics and Electronics

Volumn 8, Issue 3, 1998, Pages 135-146

  Frank, Alissa C ^a   Stowasser, Frank ^a   Stark, Oliver ^a   Kwak, Hyon Tae ^a,d   Sussek, Harald ^a   Rupp, Andreas ^a   Pritzkow, Hans ^a   Ambacher, Oliver ^b   Giersig, Michael ^c   Fischer, Roland A ^a,e  

^a UNIVERSITY OF HEIDELBERG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

^d Kookmin University   (South Korea)

^e RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Detonation; Gallium azide; Gallium nitride; Nanocrystallites

Indexed keywords

ANISOTROPY; CRYSTAL MICROSTRUCTURE; DETONATION; MASS SPECTROMETRY; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); THERMOANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

GALLIUM AZIDES; GALLIUM NITRIDE; RIETVELD SIMULATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032063857     PISSN: 10579257     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-0712(199805/06)8:3<135::AID-AMO342>3.0.CO;2-C     Document Type: Article

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