Triazidogallium and derivatives: New precursors to thin films and nanoparticles of GaN

Chemistry - A European Journal

Volumn 2, Issue 11, 1996, Pages 1353-1358

  Fischer, Roland A ^a   Miehr, Alexander ^a   Herdtweck, Eberhardt ^a   Mattner, Michael R ^a   Ambacher, Oliver ^d   Metzger, Thomas ^b   Born, Eberhard ^b   Weinkauf, Sevil ^c   Pulham, Colin R ^e   Parsons, Simon ^e  

^a UNIVERSITY OF HEIDELBERG   (Germany)

^b Lehrstuhl für Angewandte Mineralogie und Geochemie   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^d WALTER SCHOTTKY INSTITUT   (Germany)

^e UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Azides; Chemical vapor deposition; Gallium compounds; Materials science; Thin films

Indexed keywords

AZIDES; GAN NANOPARTICLES; POLYCRYSTALLINE GAN; QUINUCLIDINES; SINGLE CRYSTAL X-RAY DIFFRACTION; SOLUTION METHODS; SPIN-ON;

CHEMICAL VAPOR DEPOSITION; DEPOSITION; GALLIUM COMPOUNDS; GALLIUM NITRIDE; MATERIALS SCIENCE; NANOPARTICLES; THIN FILMS; X RAY DIFFRACTION;

SYNTHESIS (CHEMICAL);

EID: 0001504825     PISSN: 09476539     EISSN: 15213765     Source Type: Journal    
DOI: 10.1002/chem.19960021104     Document Type: Article

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