Low-temperature metalorganic chemical vapour deposition of AIN for surface passivation of GaAs

Advanced Materials for Optics and Electronics

Volumn 6, Issue 3, 1996, Pages 127-134

  Fujieda, Shinji ^a   Mizuta, Masashi ^a   Matsumoto, Yoshishige ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Aluminium nitride; Gallium arsenide; Insulating films; Metalorganic chemical vapour deposition; MOCVD; Surface passivation; Thin films

Indexed keywords

AMORPHOUS FILMS; BAND STRUCTURE; FILM GROWTH; HYDRAZINE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PASSIVATION; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

ALUMINUM NITRIDE; SURFACE PASSIVATION;

SEMICONDUCTING FILMS;

EID: 0030149131     PISSN: 10579257     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-0712(199605)6:3<127::AID-AMO228>3.0.CO;2-F     Document Type: Article

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