Novel single source precursors for MOCVD of A1N, GaN and InN

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 139-143

  Fischer, Roland A ^a   Miehr, Alexander ^a   Ambacher, Oliver ^b   Metzger, Thomas ^c   Born, Eberhardt ^c  

^a UNIVERSITY OF HEIDELBERG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; NITRIDES; ORGANOMETALLICS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ORGANOMETALLIC PRECURSORS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030653978     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00532-5     Document Type: Article

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