A new model silicon/silicon oxide interface synthesized from H10Si10O15 and Si(100)-2×1

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1622-1626

  Zhang, K Z ^a   Meeuwenberg, Leah M ^a   Holl, Mark M Banaszak ^a   Mcfeely, F R ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

SiO2 Si interface; Spherosiloxane; X ray photoemission

Indexed keywords

EID: 0011748705     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1622     Document Type: Article

References (35)

1. M. M. Banaszak Holl and F. R McFeely: Phys. Rev. Lett. 72 (1993) 2441.
2. S. Lee, S. Makan, M. M. Banaszak Holl and F. R. McFeely: J. Am. Chem. Soc. 116 (1994) 11819.
3. K. Z. Zhang, J. E. Bender IV, F. R. McFeely and M. M. Banaszak Holl: Phys. Rev. B 54 (1996) 7686.
4. B. Bent, M. M. Banaszak Holl, Y. Chabal, S. Christman, J. Eng, G. Flynn, S. Lee, S. Mantl, F. R. McFeely, K. Radermacher and G. Williams: unpublished results.
5. F. R. McFeely, K. Z. Zhang, M. M. Banaszak Holl, S. Lee and J. E. Bender IV: J. Vac. Sci. Technol. B 14 (1996) 2824.
6. S. Lee, M. M. Banaszak Holl, W. H. Hung and F. R. McFeely: Appl. Phys. Lett. 68 (1996) 1081.
7. K. Z. Zhang, M. M. Banaszak Holl and F. R. McFeely: manuscript in preparation detailing final state effects at silicon/silicon oxide interfaces.
8. A. Pasquarello, M. S. Hybertson and R. Car: Phys. Rev. Lett. 74 (1995) 1024.
9. A. Pasquarello, M. S. Hybertson and R. Car: Phys. Rev. B 53 (1996) 10942.
10. A. Pasquarello. M. S. Hybertson and R. Car: Phys. Rev. B 54 (1996) R2339.
11. A. Pasquarello, M. S. Hybertson and R. Car: J. Vac. Sci. Technol. B 14 (1996) 2809.
12. R. Browning. M. A. Sobolewski and C. R. Helms: Phys. Rev. B 38 (1988) 13407.
13. E. Pehlke and M. Scheffler: Phys. Rev. Lett. 71 (1993) 2338.
14. P. A. Agaskar: Inorg. Chem. 30 (1991) 2707.
15. P. A. Agaskar and W. G. Klemperer: Inorg. Chim. Acta 229 (1995) 355.
16. H.-B. Bürgi, K. W. Törnroos, G. Calzaferri and H. Bürgy: Inorg. Chem. 32 (1993) 4914.
17. C. J. Karlsson, E. Landemark, L. S. O. Johansson, U. O. Karlsson and R. I. G. Uhrberg: Phys. Rev. B 41 (1990) 1521.
18. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff and G. Hollinger: Phys. Rev. B 38 (1988) 6084.
19. F. J. Himpsel, F. R. McFeely, J. F. Morar, A. Taleb-Ibrahimi, J. A. Yarmoff: Proc. 1988 Enrico Fermi School on Photoemission and Absorption Spectroscopy of Solids and Interfaces with Synchrotron Radiation (North Holland, Varenna, 1988).
20. The low coverage limit of the BE shift comes at 3.7eV. The BE shift of the clusters does increase as the coverage increases. This will be discussed in detail in a future paper ref. 7.
21. C. W. Earley: J. Phys. Chem. 98 (1994) 8693.
22. G. Calzaferri and R. Hoffmann: J. Chem. Soc. Dalton Trans. (1991) 917.
23. S. M. Gates, C. M. Greenlief and D. B. Beach: J. Chem. Phys. 93 (1990) 7493.
24. The Allred/Rochow electronegativity scale is used in this paper.
25. L. Pauling: The Nature of the Chemical Bond (Cornell University Press, Ithaca, NY, 1960) 3rd Ed.
26. R. T. Sanderson: Chemical Bonds and Bond Energy (Academic Press, New York, 1976) 2nd Ed.
27. A. R. West: Solid State Chemistry and Its Applications (Wiley, New York, 1984) pp. 290-305.
28. For examples of electronegativity concepts applied to photoemission see ref. 29-32.
29. G. Lucovsky: J. de Phys. C 4 (1981) 741.
30. W. R. Knolle and J. W. Osenbach: J. Appl. Phys. 58 (1985) 1249.
31. S. Hasegawa, L. He, T. Inokuma and Y. Kurata: Phys. Rev. B 46 (1992) 12478.
32. T. Hattori: Crit. Rev. Solid State Mater. Sci. 20 (1995) 339.
33. W. T. Borden and E. R. Davidson: Acc. Chem. Res. 29 (1996) 67.
34. This observation is in agreement with the results of PHC (see refs. 8-11).
35. M. M. Banaszak Holl, S. Lee and F. R. McFeely: Appl. Phys. Lett. 65 (1994) 1097.