Theory of impurity interactions in silicon dioxide

Materials Science Forum

Volumn 239-241, Issue , 1997, Pages 33-36

  Fowler, W B ^a   Edwards, A H ^b  

^a LEHIGH UNIVERSITY   (United States)

^b University of North Carolina at Charlotte   (United States)

Author keywords

Defects; Oxidation; Silicon; Silicon Dioxide; Theory

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE;

HARTREE-FOCK GAMESS CODE; IMPURITY INTERACTIONS; NITROGEN FLUORINE DEFECT; VALENCE ALTERNATION PAIR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0344593094     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.239-241.33     Document Type: Article

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