InAs/AlSb dual-gate HFET's

IEEE Electron Device Letters

Volumn 17, Issue 11, 1996, Pages 534-536

  Bolognesi, C R ^a,b   Chow, D H ^c  

^a IEEE

^b SIMON FRASER UNIVERSITY   (Canada)

^c Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; ESTIMATION; FREQUENCIES; GATES (TRANSISTOR); HETEROJUNCTIONS; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

ALUMINUM ANTIMONIDE; DRAIN BIAS; DUAL GATE; INDIUM ARSENIDE; INTERGATE SEPARATION; KINK FREE DRAIN CHARACTERISTICS; SHORT CHANNEL EFFECTS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0030290206     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.541772     Document Type: Article

References (10)

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