Microwave Performance of a Digital Alloy Barrier A1(Sb, As)/AlSb/InAs Heterostructure Field-Effect Transistor

IEEE Electron Device Letters

Volumn 14, Issue 1, 1993, Pages 13-15

  Bolognesi, C R ^a   Werking, J D ^a   Caine, E J ^a   Kroemer, H ^a   Hu, E L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

DIGITAL ALLOY BARRIER FET; HETEROSTRUCTURE FET; HIGH-SPEED ELECTRONICS; MESA PROCESS;

FIELD EFFECT TRANSISTORS;

EID: 0027261823     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215085     Document Type: Article

References (9)

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