Pulse-Doped AlGaAs/InGaAs Pseudomorphic MODFET’s

IEEE Transactions on Electron Devices

Volumn 35, Issue 7, 1988, Pages 879-886

  Moll, Nick ^a   Hueschen, Mark R ^a   Fischer Colbrie, Alice ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES - PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE - DOPING; SUBSTRATES; SUBSTRATES - TRANSPORT PROPERTIES;

HIGH ROOM-TEMPERATURE DRAIN CURRENTS; LARGE CONDUCTION BAND DISCONTINUITY; MODULATION-DOPED FET (MODFET); PULSE-DOPED PSEUDOMORPHIC MODFET;

TRANSISTORS, FIELD EFFECT;

EID: 0024051247     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.3339     Document Type: Article

References (14)

1. C. Y. Chen et al., “Depletion mode modulation doped Al0.48In0.52As-Ga47In0.43 As heterojunction field effect transistors,” IEEE Electron Device Lett., vol. EDL-3, pp. 152–155, 1982.
2. T. P. Pearsall et al., “Selectively-doped Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistor,” IEEE Electron Device Lett., vol. EDL-4, pp. 5–8, 1983.
3. C. K. Peng et al., “Microwave performance of InAlAs/InGaAs/InP MODFET’s,” IEEE Electron Device Lett., vol. EDL-8, pp. 24–26, 1987.
4. U. K. Mishra et al., “High performance sub-micron AlInAs-GalnAs HEMTs,” presented at the Device Res. Conf., paper II A-6, 1987.
5. T. E. Zipperian, L. R. Dawson, G. C. Osborn, and I. J. Fritz, “An In0.2Ga0.8As/GaAs, modulation-doped, strained-layer superlattice field-effect transistor,” in IEDM Tech. Dig., pp. 690–698, 1983.
6. S. J. Rosenberg et al., “An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT,” IEEE Electron Device Lett., vol. EDL-6, pp. 491–493, 1985.
7. T. E. Zipperian and T. J. Drummond, “Strained-quantum-well, modulation-doped field-effect transistor,” Electron. Lett., vol. 21, pp. 823–824, 1985.
8. A. Ketterson et al., “High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field effect transistors,” IEEE Electron Device Lett., vol. EDL-6, pp. 628–630, 1985.
9. T. Henderson et al., “DC and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs psudomorphic modulation-doped field effect transistor,” Appl. Phys. Lett., vol. 48, pp. 1080–1089, 1980.
10. T. Henderson et al., “Microwave performance of a quarter-micron gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor,” IEEE Electron Device Lett., vol. EDL-7, pp. 649–651, 1986.
11. M. Hueschen, N. Moll, E. Gowen, and J. Miller, “Pulse-doped MODFET’s,” in IEDM Tech. Dig., pp. 348–351, 1984.
12. N. Moll, A. Fischer-Colbrie, and M. Hueschen, “Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs,” presented at the Devices Res. Conf., paper II A-5, 1987.
13. A. Fischer-Colbrie et al., “Growth and characterization of Al-GaAs/InGaAs/GaAs pseudomorphic structures,” J. Vac. Sci. Tech., vol. B6, p. 620 ff., 1988.
14. L. D. Nguyen, P. J. Tasker, and W. J. Schaff, “Comments on a new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1187, 1987.