In 0.52Al 0.48As/InAs/In xAl 1-xAs pseudomorphic HEMT's on InP

IEEE Electron Device Letters

Volumn 18, Issue 4, 1997, Pages 157-159

  Chin, Albert ^a,b,c   Liao, C C ^d   Tsai, C ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c TEXAS INSTRUMENTS   (United States)

^d CHUNG HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER CIRCUITS; CARRIER CONCENTRATION; GATES (TRANSISTOR); LATTICE CONSTANTS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

BUFFER LAYER DESIGN; ELECTRON MOBILITY; HALL MOBILITY; MONOLAYER SUPERLATTICES BUFFER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031117986     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.563314     Document Type: Article

References (8)

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4. U. K. Mishra, A. S. Brown, L. M. Jelloian, M. Thompson, L. D. Nguyen and S. E. Rosenbaum, "Novel high-performance self-aligned 0.15-μm long T-gate AlInAs/GaInAs HEMT's," in IEDM Tech. Dig., 1989, pp. 101-104.
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6. 0.45As pseudomorphic modulation-doped field-effect transistors," IEEE Electron Device Lett., vol. EDL-8, pp. 380-382, Sept. 1987.
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8. A. Chin, T. Y. Chang, A. Ourmazd, E. M. Monberg, and A. M. Chang, "Effects of substrate orientation, pseudomorphic growth and superlattice on alloy scattering in modulation-doped GaInAs," J. Cryst. Growth, vol. 111, pp. 466-469, 1991.