Reverse Modeling Of E/D Logic Submicrometer Modfet'S And Prediction Of Maximum Extrinsic Modfet Current Gain Cutoff Frequency

IEEE Transactions on Electron Devices

Volumn 37, Issue 4, 1990, Pages 920-934

  Rohdin, Hans ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY--APPLICATIONS; SEMICONDUCTOR MATERIALS--MANUFACTURE;

Y-PARAMETERS;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0025418366     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.52425     Document Type: Article

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