Numerical simulations of neutron effects on bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1371-1375

  Bennett, Herbert S ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939064273     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337482     Document Type: Article

References (7)

1. J. R. Srour, “Basic Mechanisms of Radiation Effects on Electronic Materials, Devices, and Integrated Circuits,” Tutorial Short Course, IEEE 1983 Nuclear and Space Radiation Effects Conference, July 17, 1983, Gatlinburg, Tennessee.
2. B. L. Gregory and C. W. Gwyn, “Radiation Effects on Semiconductor Devices,” Proceedings of the IEEE 62, 1264–1273 (1974).
3. H. S. Bennett and D. E. Fuoss, “Improved Physics for Simulating Submicron Bipolar Devices,” IEEE Transactions on Electron Devices ED-32, 2069–2075 (1986).
4. Semiconductor Device Analysis, Stanford University, Stanford, CA, October 1979 version. This identification does not imply recommendation or endorsement by the National Bureau of Standards nor does it imply that the computer code identified is necessarily the best available for the purpose.
5. M. S. Cooper and J. P. Retzler, “Combined Neutron and Thermal Effects on Bipolar Transistor Gain,” IEEE Transactions on Nuclear Science NS-26, 4758–4762 (1979).
6. C. T. Kleiner and G. C. Messenger, “An Improved Bipolar Junction Transistor Model for Electrical and Radiation Effects,” IEEE Transactions on Nuclear Science NS-29, 1569–1579 1579 (1982).
7. H. S. Bennett, M. Gaitan, P. Roitman, T. J. Russell, and J. S. Suehle, “Modeling MOS Capacitors to Extract Si-SiO2 Interface Trap Densities in the Presence of Arbitrary Doping Profiles, IEEE Transactions on Electron Devices ED-33, 759–765 (1986).