Comparison of the degradation effects of heavy ion, electron, and cobalt-60 irradiation in an advanced bipolar process

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1428-1431

  Zoutendyk, John A ^a   Goben, Charles A ^a   Berndt, Dale F ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; ION BEAMS; IONIZATION;

HEAVY IONS;

TRANSISTORS, BIPOLAR;

EID: 0024176507     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25475     Document Type: Article

References (11)

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6. Frank H. Attix, Introduction to Radiological Physics and Radiation Dosimetry. New York: John Wiley and Sons, 1986, ch. 8.
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8. G.P. Mueller, N.D. Wilsey, and Mervine Rosen, “The structure of displacement cascades in silicon,” IEEE Trans. Nucl. Sci., vol. NS-29, no. 6, pp. 1493–1497, Dec. 1982.
9. Frank H. Attix, Introduction to Radiological Physics and Radiation Dosimetry. New York: John Wiley and Sons, 1986, ch. 6, p. 120.
10. Ibid., ch. 7, p. 135.
11. C.A. Goben, “Study of the neutron-induced base current component in silicon transistors, IEEE Trans. Nucl. Sci., NS-12, no. 6, pp. 134–146, Dec. 1965.