A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier

IEEE Microwave and Guided Wave Letters

Volumn 7, Issue 5, 1997, Pages 133-135

  Chen, Y C ^a   Lai, R ^a   Lin, E ^a   Wang, H ^a   Block, T ^a   Yen, H C ^a   Streit, D ^a   Jones, W ^a   Liu, P H ^a   Dia, R M ^a   Huang, T W ^a   Huang, P P ^a   Stamper, K ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GAIN MEASUREMENT; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

HIGH POWER MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) AMPLIFIERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0031144703     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.569728     Document Type: Article

References (12)

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