Avalanche breakdown of high-voltage p-n junctions of SiC

Microelectronics Journal

Volumn 27, Issue 1, 1996, Pages 43-51

  Pelaz, L ^a   Orantes, J L ^a   Vicente, J ^a   Bailon L ^a   Barbolla, J ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC VARIABLES CONTROL; INTERFACES (MATERIALS); IONIZATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACE PHENOMENA;

AVALANCHE BREAKDOWN; HIGH VOLTAGE PN JUNCTIONS; IN SITU DOPING; SURFACE BREAKDOWN;

SEMICONDUCTOR JUNCTIONS;

EID: 0030083151     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00056-9     Document Type: Article

References (36)

1. R.F. Davis, Z. Sitar, B.E. Williams, H.S. Kong, H.J. Kim, J.W. Palmour, J.A. Edmond, J. Ryu, J.T. Glass and C.H. Carter Jr., Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide, Mater. Sci. Eng., B1, (1988) 77-104.
2. R.B. Campbell and H.C. Chang, Semiconductors and Semimetals, Vol. 7, Academic Press, New York, 1971, pp. 625-693.
3. S.M. Sze and G. Gibbons, Effect of junction curvature on breakdown voltage in semiconductors, Solid-State Electron., 13 (1966) 831-845.
4. B.J. Baliga and S.K. Ghandhi, Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions, Solid-State Electron., 19 (1976) 739-744.
5. C.G.B. Garrett and W.H. Brattain, Some experiments on, and a theory of, surface breakdown, J. Appl. Phys., 27(3) (1956) 299-306.
6. R.L. Davies and F.E. Gentry, Control of electric field at the surface of p-n junctions, IEEE Trans. Elec. Devices, 11 (1964) 313-323.
7. J. Cornu, Field distribution near the surface of beveled p-n junctions in high-voltage devices, IEEE Trans. Elec. Devices, 20(4) (1973) 347-352.
8. A. Savini, E. Dallago, M. Felici, M. Panigada and F. Versiglia, Edge effects in glass-passivated collector-base junctions of high-voltage transistors, IEE Proc., 129, Pt. 1, No. 3 (1982) 116-120.
9. M.S. Adler and V.A.K. Temple, A general method for predicting the avalanche breakdown voltage of negative bevelled devices, IEEE Trans. Elec. Devices, 23(8) (1976) 956-960.
10. M. Bakowsky and K.I. Lundströng, Depletion layer characteristics at the surface of beveled high-voltage p-n junctions, IEEE Trans. Elec. Devices, 20(16) (1973) 550-563.
11. M. Bakowsky and B. Hansson, Influence of bevel angle and surface charge on the breakdown voltage of negatively beveled diffused p-n junctions, Solid-State Electron., 18 (1975) 651-657.
12. J.P. Gourret and J. Paille, Breakdown voltage modeling in mesa power devices, Phys. Status Solidi (a), 75 (1983) 207-217.
13. MEDICI, Technology Modeling Associates, 1992.
14. C. Basavana Gour and K.N. Bhat, On the choice of appropriate ionization coefficients for breakdown voltage calculations, Solid-State Electron., 30(8) (1987) 787-792.
15. R. Van Overstraeten and H. De Man, Measurement of the ionization rates in diffused silicon p-n junctions, Solid-State Electron., 13 (1970) 583-608.
16. Y.A. Vodakov, A.O. Konstantinov, D.P. Litvin and V.I. Sankin, Avalanche ionization in silicon carbide p-n structures, Sov. Tech. Phys., 7(6) (1981) 301-302.
17. A.P. Dmitriev, A.O. Konstantinov, D.P. Litvin and V.I. Sankin, Impact ionization and superlattice in 6H-SiC, Sov. Phys. Semicond., 17(6) (1983) 686-689.
18. A.O. Konstantinov, Investigation of ambipolar avalanche multiplication in silicon carbide, Sov. Phys. Semicond., 17(12) (1983) 1358-1361.
19. S.G. Konnikov, A.O. Konstantinov and V.II Litmanovich, Investigation of avalanche multiplication in silicon carbide by an electron probe, Sov. Phys. Semicond., 18(9) (1984) 875-977.
20. A.O. Konstantinov, Influence of temperature on impact ionization and avalanche breakdown in silicon carbide, Sov. Phys. Semicond., 23(1) (1989) 31-34.
21. A.S. Kyuregyan and S.N. Yurkov, Room-temperature avalanche breakdown voltages of p-n junctions made of Si, Ge, SiC, GaAs, GaP, and InP, Sov. Phys. Semicond., 23(10) (1989) 1126-1131.
22. M. Ruff, H. Mitlehner and R. Helbig, SiC devices: physics and numerical simulation, IEEE Trans. Electron Devices, 41(6) (1994) 1040-1054.
23. W.v. Muench and I. Pfaffeneder, Breakdown field in vapor-grown silicon carbide p-n junctions, J. Appl. Phys., 48(11) (1977) 4831-4833.
24. L.G. Matus and J.A. Powel, High-voltage 6H-SiC p-n junction diodes, Appl. Phys. Lett., 59(14) (1991) 1770-1772.
25. P.G. Neudeck, D.J. Larkin, J.E. Starr, J.A. Powell, C.S. Salupo and L.G. Matus, Electrical properties of epitaxial 3C-and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates, IEEE Trans. Electron. Devices, 41(5) (1994) 826-835.
26. J.A. Edmond, D.G. Waltz, S. Brueckner, H.S. Kong, J.W. Palmour and C.H. Carter Jr., High temperature rectifiers in 6H-silicon carbide, Proc. 1st Int. High Temp. Electron. Conf., Albuquerque, NM, 1991, pp. 207-212.
27. A. O. Konstantinov, Avalanche breakdown filamentation in silicon carbide, Sov. Phys. Semicond., 23(6) (1989) 616-621.
28. B.S. Kondrat'ev, I.V. Popov, A.M. Strel'chuk and M.L. Tiranov, Electrical characteristics and temperature coefficient of the breakdown voltage of micro-plasmas in low-voltage silicon carbide p-n structures, Sov. Phys. Semicond., 24(4) (1990) 406-410.
29. G. Gramberg and M. Königer, Preparation and properties of vapour phase epitaxial silicon carbide diodes, Solid-State Electron., 15 (1972) 285-292.
30. M. Bhatnagar, H. Nakanishi, S. Bothra, P.K. McLarty and B.J. Baliga, Edge terminations for SiC high voltage Schottky rectifiers, Proc. 5th Int. Symp. Power Semiconductor Devices and ICs, 1933, pp. 89-94.
31. T. Kimoto, T. Urushidani, S. Kobayashi and H. Matsunami, High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances, IEEE Electron. Devices Lett., 14(12) (1993) 548-550.
32. D. Alok, B.J. Baliga and P.K. McLarty, A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage, IEEE Trans. Devices Lett., 15(10) (1994) 394-395.
33. C.M. Zetterling and M. Östling, Comparison of thermal gate oxides on silicon and carbon face p-type 6H silicon carbide, Mater. Res. Soc. Symp. Proc., 339 (1994) 209-214.
34. D.M. Brown, M. Ghezzo, J. Kretchmer, E. Downey and J. Palmour, SiC MOS interface characteristics, IEEE Trans. Electron. Devices, 41(4) (1994) 618-620.
35. D.J. Larkin, P.G. Neudeck, J.A. Powell and L.G. Matus, Characterization of improved epitaxial 3C-SiC and 6H-SiC, Workshop on SiC Materials and Devices Abstracts, 1992, pp. 37-38.
36. S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.