Numerical study of avalanche breakdown of 6H-SiC planar p-n junctions

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1500-1503

  Stefanov, E ^a   Bailon, L ^b   Barbolla, J ^b  

^a LAAS CNRS   (France)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

2 D numerical analysis; Breakdown voltage; Floating ring; GH SiC; Junction termination extensions; p n junction

Indexed keywords

EID: 0042728259     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00056-3     Document Type: Article

References (7)

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