Parametric study of compound semiconductor etching utilizing inductively coupled plasma source

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 431-444

  Constantine, C ^a   Johnson, D ^a   Barratt, C ^a   Shul, R J ^a   McClellan, G B ^a   Briggs, R D ^a   Rieger, D J ^a   Karlicek Jr , R F ^a   Lee, J W ^a   Pearton, S J ^a  

^a Plasma Therm IP   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON CYCLOTRON RESONANCE; FABRICATION; PLASMA SOURCES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; WAVEGUIDES;

COMPOUND SEMICONDUCTOR ETCHING; ELECTRON CYCLOTRON RESONANCE SOURCES; INDUCTIVELY COUPLED PLASMA SOURCES;

PLASMA ETCHING;

EID: 0030373155     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-431     Document Type: Conference Paper

References (22)