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Volumn 25, Issue 3, 1999, Pages 89-121

SiGe field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRONICS PACKAGING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

EID: 0032629589     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-796X(99)00002-9     Document Type: Article
Times cited : (24)

References (103)
  • 27
    • 0024087662 scopus 로고
    • Evolution of the MOS transistor from conception to VLSI
    • Sah C.T. Evolution of the MOS transistor from conception to VLSI. Proc. IEEE. 76:1988;1280.
    • (1988) Proc. IEEE , vol.76 , pp. 1280
    • Sah, C.T.1
  • 32
    • 0345068292 scopus 로고
    • VLSI: What does the future hold?
    • Moore G. VLSI: what does the future hold? Electron. Aust. 42:1980;14.
    • (1980) Electron. Aust. , vol.42 , pp. 14
    • Moore, G.1
  • 33
    • 0001485414 scopus 로고
    • Electron velocity in Si and GaAs at very high electric fields
    • Smith P., Inoue M., Frey J. Electron velocity in Si and GaAs at very high electric fields. Appl. Phys. Lett. 37:1980;797.
    • (1980) Appl. Phys. Lett. , vol.37 , pp. 797
    • Smith, P.1    Inoue, M.2    Frey, J.3
  • 42
    • 85031617301 scopus 로고    scopus 로고
    • Figure Complied by Don Monroe
    • Figure Complied by Don Monroe.
  • 100
    • 85031634016 scopus 로고
    • 4 solutions
    • 4 solutions. RCA Rev. 31:1970;234.
    • (1970) RCA Rev. , vol.31 , pp. 234
    • Kern, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.