Velocity overshoot of electrons and holes in Si inversion layers

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1119-1125

  Sinitsky, D ^a   Assaderaghi, F ^a   Orshansky, M ^a   Bokor, J ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

HOLES; INVERSION LAYERS; VELOCITY OVERSHOOT;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031206710     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00031-2     Document Type: Article

References (14)

1. Ruch, J. G. IEEE Trans. Electron. Dev., 1972, ED-19, 652.
2. Chou, S. Y., Antoniadis, D. A. and Smith, H. I. IEEE Electron Device Lett., 1985, EDL-6(12), 665-667.
3. (a) Shahidi, G. G., Antoniadis, D. A. and Smith, H. I. IEEE Electron Device Lett., 1988, 9(2), 94-96.
4. (b) Sai-Halasz, G. A., Wordeman, M. R., Kern, D. P., Rishton, S. and Ganin, E. IEEE Electron Device Lett., 1988, 9(9), 464-466.
5. Assaderaghi, F., Sinitsky, D., Gaw, H., Bokor, J., Ko, P. K. and Hu, C. IEDM Tech. Dig., 1994, 479-482.
6. Teitel, S. L. and Wilkins, J. W, IEEE Trans. Electron Dev., 1983, ED-30 (2).
7. MEDICI version 2.0, TMA Inc., 1994.
8. Choi, W. S., Assaderaghi, F., Park, Y. J., Min, H. S., Hu, C. and Dutton, R. W. IEEE Electron Device Lett., 1995, 16, 333-335.
9. Bagwell, P. F., Antoniadis, D. A. and Orlando, T. P. in Advanced MOS Device Physics, ed. N. G. Einspruch and G. Gildenblat, Vol. 18, Academic Press, 1989, Ch. 8.
10. Huang, R. S. and Ladbrooke, P. H. J. Appl. Phys., 48,(11) 1977.
11. Lundstrom, M. Fundamentals of Carrier Transport, X Modular Series on Solid State Devices, ed. G. W. Neudeck and R. F. Pierret, Addison Wesley Co., 1990.
12. Baccarani, G. and Wordeman, M. R. Solid-St. Electron., 1985, 28,(4), 407-416.
13. Assaderaghi, F. PHD Thesis, University of California, Berkeley, 1993.
14. Chen, D., Kan, E., Ravaioli, U., Shu, C.-W. and Dutton, R. W. IEEE Electron Device Lett., 1992, 13,(1), 26-28.