Hole confinement and mobility in heterostructure Si/Ge/Si p-channel metal-oxide-semiconductor field effect transistors

Journal of Applied Physics

Volumn 81, Issue 12, 1997, Pages 8079-8083

  Cyca, B R ^a   Robins, K G ^a   Tarr, N G ^a   Xu, D X ^b   Noel, J P ^b   Landheer, D ^b   Simard Normandin, M ^c  

^a CARLETON UNIVERSITY   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; FABRICATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOS DEVICES; NUMERICAL METHODS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

CAPACITANCE VOLTAGE CHARACTERISTICS; HOLE CONFINEMENT; HOLE MOBILITY; MOS CAPACITOR; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION GATE OXIDE; SCHRODINGER-POISSON EQUATION; THERMAL BUDGET PROCESS;

MOSFET DEVICES;

EID: 0031162042     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365415     Document Type: Article

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