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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3279, Issue , 1998, Pages 69-76

Material characterization for III-Nitride based light emitters

(7) Kneissl, Michael a Bour, David P a Romano, Linda T a Krusor, Brent S a McCluskey, Matt a Goetz, Werner a Johnson, Noble M a

a PALO ALTO RESEARCH CENTER (United States)

Author keywords

AlGaN; GaN; III Nitride; InGaN; Laser diodes; Light emitting diodes; MOCVD; OMVPE; Quantum well; Wide bandgap semiconductors

Indexed keywords

ELECTROLUMINESCENCE; HALL EFFECT; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

WIDE BANGAP SEMICONDUCTORS;

LIGHT EMITTING DIODES;

EID: 0032226384 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.304411 Document Type: Conference Paper

Times cited : (5)

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