Modulation speed of an efficient porous silicon light emitting device

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2764-2773

  Cox, T I ^a   Simons, A J ^a   Loni, A ^a   Calcott, P D J ^a   Canham, L T ^a   Uren, M J ^a   Nash, K J ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; ELECTRON TRAPS; EXCITONS; LIGHT MODULATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROUS SILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WIRES;

SMALL ANGLE SIGNAL MODULATION;

LIGHT EMITTING DIODES;

EID: 0032620392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371123     Document Type: Article

References (37)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. T. I. Cox, in Properties of Porous Silicon, edited by L. T. Canham (INSPEC, London, 1997), Sec. 10.2, p. 290.
3. L. T. Canham, T. I. Cox, A. Loni, and A. J. Simons, Appl. Surf. Sci. 102, 436 (1996).
4. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
5. P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, J. Phys.: Condens. Matter 5, L91 (1993).
6. A. Loni, A. J. Simons, T. I. Cox, P. D. J. Calcott, and L. T. Canham, Electron. Lett. 31, 1288 (1995).
7. N. Lalic and J. Linnros, Thin Solid Films 276, 155 (1996).
8. J. Linnros and N. Lalic, Appl. Phys. Lett. 66, 3048 (1995).
9. J. Linnros, N. Lalic, P. Knapek, K. Luterova, J. Kocka, A. Fejfar, and I. Pelant, Appl. Phys. Lett. 69, 833 (1996).
10. N. Lalic and J. Linnros, J. Appl. Phys. 80, 5971 (1996).
11. K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Nature (London) 384, 338 (1996).
12. K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Mater. Res. Soc. Symp. Proc. 452, 705 (1997).
13. Y. Chen, N. Liang, L. Laih, W. Tsay, M. Chang, and J. Hong, Jpn. J. Appl. Phys., Part 1 36, 1574 (1997).
14. Y. Chen, B. Chen, W. Tsay, L. Laih, M. Chang, J. Chyi, J. Hong, and C. Chang, Solid-State Electron. 41, 757 (1997).
15. K. Nishimura, Y. Nagao, and N. Ikeda, Jpn. J. Appl. Phys., Part 2 37, L303 (1998).
16. F. Kozlowski, C. Sailer, P. Steiner, B. Knoll, and W. Lang, Thin Solid Films 276, 164 (1996).
17. J. F. Harvey, R. A. Lux, D. C. Morton, G. F. McLane, and R. Tsu, Mater. Res. Soc. Symp. Proc. 283, 395 (1993).
18. A. J. Simons, T. I. Cox, A. Loni, P. D. J. Calcott, M. J. Uren, and L. T. Canham, Mater. Res. Soc. Symp. Proc. 452, 693 (1997).
19. N. Lalic and J. Linnros, Thin Solid Films 297, 277 (1997).
20. M. Balucani, S. La Monica, S. Lazarouk, G. Maiello, G. Masini, and A. Ferrari, Solid State Phenom. 54, 8 (1997).
21. M. Balucani, S. La Monica, and A. Ferrari, Appl. Phys. Lett. 72, 639 (1998).
22. C. Delerue, M. Lannoo, and G. Allan, in Properties of Porous Silicon, edited by L. T. Canham (INSPEC, London, 1997), Sec. 7.3, p. 212.
23. G. Di Francia, G. Iadonisi, P. Maddalena, M. Migliaccio, D. Ninno, and E. Santamalo, Opt. Commun. 127, 44 (1996).
24. A. G. Cullis and L. T. Canham, Nature (London) 353, 335 (1991).
25. E. A. Lebedev, E. A. Smorgonskaya, and G. Polisski, Phys. Rev. B 57, 14607 (1998).
26. C. Peng, K. D. Hirschman, and P. M. Fauchet, J. Appl. Phys. 80, 295 (1996).
27. P. Rao, E. A. Schiff, L. Tsybeskov, and P. M. Fauchet, Mater. Res. Soc. Symp. Proc. 452, 613 (1997).
28. A. J. Simons, in Properties of Porous Silicon, edited by L. T. Canham (INSPEC, London, 1997), Sec. 6.2, p. 176.
29. M. Ben-Chorin, S. Grebner, F. Wang, R. Schwarz, A. Nikolov, and F. Koch, Mater. Res. Soc. Symp. Proc. 358, 575 (1995).
30. L. M. Peter and R. I. Wielgosz, Appl. Phys. Lett. 69, 806 (1996).
31. A. J. Simons, T. I. Cox, A. Loni, P. D. J. Calcott, M. J. Uren, and L. T. Canham, in Proceedings of the International Symposium on Advanced Luminescent Materials, edited by D. J. Lockwood, P. M. Fauchet, N. Koshida, and S. R. J. Brueck (Electrochemical Society, New York, 1996), Vol. 95-25, p. 73.
32. M. Schoisswohl, H. I. von Bardeleben, V. Morazzani, A. Grosman, C. Ortega, St. Frohnhoff, M. G. Berger, and H. Munder, Thin Solid Films 255, 123 (1995).
33. M. H. White and J. R. Cricchi, IEEE Trans. Electron Devices ED-19, 1280 (1972).
34. L. Pavesi, R. Guardini, and C. Mazzoleni, Solid State Commun. 97, 1051 (1996).
35. M. Araki, H. Koyama, and N. Koshida, Appl. Phys. Lett. 69, 2956 (1996).
36. H. Mizuno, H. Koyama, and N. Koshida, Appl. Phys. Lett. 69, 3779 (1996).
37. B. Hamilton, J. Jacobs, D. A. Hill, R. F. Pettifer, D. Teehan, and L. T. Canham, Nature (London) 393, 443 (1998).