A simple model for porous silicon photoluminescence line shape

Optics Communications

Volumn 127, Issue 1-3, 1996, Pages 44-47

  Di Francia, G ^b   Iadonisi, G ^a   Maddalena, G ^a   Migliaccio, M ^a   Ninno, D ^a   Santamato, E ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b ENEA CR Portici   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; MATHEMATICAL MODELS; POROUS SILICON; SEMICONDUCTOR QUANTUM WIRES; STATISTICAL METHODS;

INVERSE SQUARE LAW; PHOTOLUMINESCENCE LINE SHAPE;

PHOTOLUMINESCENCE;

EID: 0030172983     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/0030-4018(95)00707-5     Document Type: Article

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