High external quantum efficiency of electroluminescence from photoanodized porous silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 3 B, 1998, Pages

  Nishimura, Kohsuke ^a   Nagao, Yasuyuki ^a   Ikeda, Noriaki ^a  

^a KDDI R AND D LABORATORIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; PHOTOCHEMICAL REACTIONS; POROUS SILICON; QUANTUM EFFICIENCY; SILICON WAFERS;

PHOTOANODIZATION; SERIES RESISTANCE;

LIGHT EMITTING DIODES;

EID: 0032023625     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l303     Document Type: Article

References (11)