Integrating bipolar junction transistors with silicon-based light-emitting devices

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 705-710

  Hirschman, K D ^a   Tsybeskov, L ^a   Duttagupta, S P ^a   Fauchet, P M ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTROLUMINESCENCE; ELECTRON TRANSPORT PROPERTIES; INTEGRATED CIRCUIT MANUFACTURE; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

BIPOLAR JUNCTION TRANSISTORS; CARRIER TRANSPORT; PROCESS INTEGRATION; SILICON RICH SILICON OXIDE;

BIPOLAR TRANSISTORS;

EID: 0030646510     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)